FGMOS, a MOSFET with an additional electrically isolated gate known as floating-gate, has been used in digital circuit design for quite some time with applications in the design of memories. The charge stored on the floating-gate affects the conductivity of the channel and in turn alters the threshold voltage. This imparts programmability to threshold voltage of a FGMOS to make it suitable for low voltage analog circuit structures. Analog circuit structures and their applications in analog signal processing based on standard FGMOS technology at a nominal supply voltage of ± 0.75 V has been presented. The FGMOS based structures developed include Current Mirrors, Voltage Buffers and Current Conveyors (CCs). Further, CCs have been used in realizing gyrator, inductance simulation and capacitance multiplier. Active filters (all-pass, low-pass, band-pass, notch filters) have also been designed and their characteristics evaluated. All the investigations on these structures have been verified through PSpice simulations using level 3 model parameters for 0.5 μm CMOS technology.